石墨烯产品标准
命名及产品型号编制标准如下：
一．石墨烯厚度变化及命名的变化
1. 石墨烯厚度《1nm或层数1层，统称单层石墨烯。
2. 石墨烯厚度1~2nm或层数5层以内，统称为少层或者寡层石墨烯
3. 石墨烯厚度为2~5nm或者5~10层的，统称多层石墨烯。
4. 石墨烯厚度为5~8nm或10层以上的，统称石墨烯纳米片。
5. 厚度大于8~25nm的石墨纳米片。
6. 厚度做后缀标示在后面，nm为默认。
二．石墨烯片径的变化及命名的变化
1. 片径《10nm，厚度《1nm的，命名为石墨烯量子点，命名为纳微尺寸。
2. 片径《100nm的，厚度1nm左右的，命名为纳小尺寸。
3. 片径100~200nm的，厚度1nm左右的，命名为纳小尺寸。
3-1. 片径200~500nm的，厚度1nm左右的，命名为纳中尺寸。
3-2. 片径500nm~1μm的，厚度1nm左右的，命名为纳大尺寸。
4-1. 片径1~10μm的，厚度1nm左右的，命名为普通尺寸。命名为微小尺寸。
5. 片径10μm~100μm的，厚度1nm左右的，命名为大尺寸。命名为微大尺寸。
6. 片径》100μm的，厚度1nm左右的，命名为超大尺寸。
7. 片径作为后缀标示在后面，μm为默认。
三．纯度的变化及其命名的变化
1. 纯度》95的为普通纯度。
2. 纯度》99%的为高纯度。
3. 纯度《70%为低纯度。
4. 纯度作为后缀标示在后面，如纯度为95%，标示为-95。
四.石墨烯种类变化及其命名变化
1.还原法石墨烯为RG。
2.化学法还原为CRG。
3.热还原发为TRG。
4.氧化石墨烯（石墨烯氧化物）为GO。
5.石墨烯量子点GD，D取自dote。
6.氧化石墨烯量子点GOD。
7.石墨烯微片GNP。
8.插层法IG。
9.化学气相沉积法制备石墨烯薄膜CVG。
10.单晶石墨烯SCG，SC取自Single crystal。
五.气相沉积法石墨烯膜的命名
1.单层的气相沉积法石墨烯膜CVSG，去single第一个字母。
2.双层及以上层数的在后面标相应的-数字，如2层，-2。
3.单层率分90%和85%两种，标在后面。
4.方块电阻分方阻500-800和方阻1000-2000两种标在后面。
5.基底作为后缀标在后面，如铜基底的，标示为-Cu。
6.泡沫镍石墨烯膜NFG，NF取自Nickel foam。
7.氧化石墨烯膜GOF，F取自film。
8.尺寸用长/宽表示，如1*1cm表示为1/1，cm为默认。
9.旋涂PMMA的预制石墨烯膜标示为CVPG，去PMMA第一个字母P，也是prior的第一个字母。
六．改性及修饰后石墨烯命名
1.羟基改性的命名为羟基化石墨烯，型号加上后缀-OH。
2.羟基改性的命名为羟基化石墨烯，型号加上后缀-COOH。
3.氨基改性的命名为氨基化石墨烯，型号加上后缀-NH2。
4.巯基改性的命名为巯基化石墨烯，型号加上后缀-SH。
5.各种金属掺杂的命名为某元素掺杂石墨烯，铂掺杂石墨烯，后缀加上-Pt。
6.各种分散液，型号上加后缀该溶剂简称，比如：溶剂为水可以加上-H2O或者-W
七．我公司命名实例。
我公司石墨烯命名从纯粹编号演化到现在的，根据型号命名即可基本判断该石墨烯基本特性。
举例:
吉仓高纯度普通尺寸氧化石墨烯
JCGO-99-1-2
JC:吉仓公司标志
GO：氧化石墨烯
99：纯度99%
1：厚度1nm
2：片径2微米
吉仓预制单层铜基石墨烯膜
JCVSPG-90-1-10/10-Cu
南京吉仓纳米科技有限公司
JCNANOgraphene standards(20140906)
Thisis own products standard.I will push for compilation of graphene industrystandards.These names have corresponding products.We can create some newproducts according to the standard.This standard can avoid graphene disorderlycompetition in the market, make graphene industry into the good development.
The standards for naming and serial numbermarking of graphene are as follows:
1. Graphene thickness variations and thecorresponding naming changes
Thickness
Thickness between1~2 nm or less 5 layers,denoted as few layer graphene.
Thickness between 2-5 nm or 5~10 layers,denoted as multilayer layer graphene.
Thickness between 5-8 nm or 10~20 layer ,denoted as grapheme nanoflakes.
Thickness > 8~25nm, denoted as graphitenanoflakes.
The suffix was marked by graphenethickness in the final, the default units is nm.
2. Graphene nanosheet diameter variationsand the corresponding naming changes
Nanosheet diameter
Nanosheet diameter about 1 nm, denoted as Nano-micro.
Nanosheet diameter between 100-200 nm,thickness about 1 nm, denoted as small-size.
Nanosheet diameter between 200-500 nm,thickness about 1 nm, denoted as Nano-middle size.
Nanosheet diameter between 500 nm-1 um,thickness about 1 nm, denoted as Nano-big size.
Nanosheet diameter between 1~10 um,thickness about 1 nm, denoted as Micro-tiny size.
Nanosheet diameter between 10-100 um,thickness about 1 nm, denoted as micro-big size.
Nanosheet diameter > 100 um, thicknessabout 1 nm, denoted as oversized.
The suffix was marked by graphenenanosheet diameter in the final, the default units is um.
3. Graphene purity variations and thecorresponding naming changes
Purity
Purity > 95 %, common purity
Purity > 99 %, high purity
The suffix was marked by graphene purityin the final, e.g., purity is 95 %, denoted as -95.
4. Graphene type variations and thecorresponding naming changes
Reduction graphene denoted as “RG”.
Chemical reduction graphene denoted as“CRG”.
Thermal reduction graphene denoted as“TRG”.
Graphene oxide denoted as “GO”.
Graphene quantum dots denoted as “GD”.
Graphene oxide quantum dots denoted as“GOD”.
Graphene nanoflake denoted as “GNP”.
Intercalation denoted as “IG”.
Chemical vapor deposition synthesizedgraphene film denoted as “CVG”.
Single crystal graphene denoted as “SCG”.
5. The naming of graphene filmssynthesized by chemical vapor deposition
Chemical vapor deposition synthesizedsingle layer graphene film denoted as “CVSG”.
Bi-layer and multilayer graphene, a suffixwas marked by graphene layers in the final, e.g., Bi-layer, -2.
There are two types of graphene films withdifferent single layer percentage (85%, 90%), and the corresponding naming wasmarked by a suffix with their single layer percentage in the final.
The square resistance of graphene filmsderived into 500-800 and 1000-2000, and the corresponding naming was marked bya suffix with their square resistance in the final.
Substrate as a suffix marked in the final,e.g., Cu substrate, -Cu.
Ni foam supported graphene film denoted as“NFG”.
Graphene oxide film denoted as “GOF”.
The length/width of substrate was used toshow their dimensions, e.g. 1*1cm denoted as 1/1，the default units is cm.
Spin-coating PMMA synthesized priorgraphene films denoted as “CVPG”.
6. The naming of modified andfunctionalized graphene
Hydroxy functionalized graphene denoted as“hydroxylated graphene”, and marked by a –OH suffix.
Carboxyl functionalized graphene denotedas “Carboxylated graphene”, and marked by a –COOH suffix.
Amino functionalized graphene denoted as“amination graphene”, and marked by a –NH2 suffix.
Sulfydryl functionalized graphene denotedas “thiolated graphene”, and marked by a –SH suffix.
A series of metal doped graphene denotedas “X doped graphene”, e.g., Pt doped graphene, and marked by a –Pt suffix.
A series of solutions was marked by thesolvent in the latter of the serial number, e.g., the solvent was water, andmarked by a –H2O or -W suffix.
7. An example naming of our companygraphene
The naming of graphene products in ourcompany was evolved from their serial numbers, and the basic characteristic ofgraphene can be obtained according to their naming.
For Example:
JCNANO high purity common size grapheneoxide
JCGO-99-1-2
JC: JCNANO symbol
GO: graphene oxide
99：thepurity of graphene oxide is 99%
1：thethickness is 1 nm
2：thenanosheet diameter is 2 um
JCNANO prior processing Cu substratesingle layer graphene film
JCVSPG-90-1-10/10-Cu
JC: JCNANO symbol
1：thethickness is 1 nm
10/10-Cu: The length/width of Cu substrateis 10/10.
CV:CVD graphene.
S:single layer.
P:prior processing
NanJingJCNANO Technology Co., Ltd
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